Self-aligned via

ABSTRACT

There is disclosed in an example an integrated circuit, including: a first layer having a dielectric, a first conductive interconnect and a second conductive interconnect; a second layer having a third conductive interconnect; a conductive via between the first layer and the second layer to electrically couple the second conductive interconnect to the third conductive interconnect; a dielectric plug disposed vertically between the first layer and second layer and disposed to prevent the via from electrically shorting to the first conductive interconnect; and a dielectric cap covering the dielectric plug.

FIELD OF THE SPECIFICATION

This disclosure relates in general to the field of semiconductor processing, and more particularly, though not exclusively to, a system and method for a hardened plug for improved shorting margin.

BACKGROUND

Semiconductors and dielectric materials have a breakdown voltage, often expressed in terms of volts per unit length. Once the breakdown voltage is exceeded for a material, it may act like a conductor rather than an insulator.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not necessarily drawn to scale, and are used for illustration purposes only. Where a scale is shown, explicitly or implicitly, it provides only one illustrative example. In other embodiments, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a cutaway side view illustration of a semiconductor device according to one or more examples of the present specification.

FIGS. 2-7 are illustrations of various stages of a semiconductor fabrication process according to one or more examples of the present specification.

FIG. 8 is a flow chart of a semiconductor fabrication process according to one or more examples of the present specification.

FIG. 9 is a top view of via placement on a semiconductor device according to one or more examples of the present specification.

FIG. 10 is a top view of via placement on a semiconductor device according to one or more examples of the present specification.

FIG. 11 is a cutaway side view and top view of a semiconductor device with a hardened plug according to one or more examples of the present specification.

FIGS. 12a and 12b are flow charts of methods of producing a self-aligned via according to one or more examples of the present specification.

FIGS. 13 and 14 are cutaway side views illustrating the operations of FIGS. 12a and 12 b.

FIGS. 15a and 15b are top views and side views illustrating additional embodiment of the present specification.

FIG. 16 is a top view and cutaway side view illustrating a final configuration according to one or more examples of the present specification.

FIGS. 17a and 17b are top views of a fabricated wafer according to one or more examples of the present specification.

FIG. 18 is a cutaway side view of a semiconductor device according to one or more examples of the present specification.

FIG. 19 is a cutaway side view of an integrated circuit according to one or more examples of the present specification.

FIG. 20 is a block diagram of an integrated circuit according to one or more examples of the present specification.

EMBODIMENTS OF THE DISCLOSURE

The following disclosure provides many different embodiments, or examples, for implementing different features of the present disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. Further, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Different embodiments may have different advantages, and no particular advantage is necessarily required of any embodiment,

The present specification discloses a novel system and method for providing a hardened, etch-resistant plug to improve shorting margins in a semiconductor device.

“Moore's Law” is an observation by Gordon Moore, the cofounder of Intel® Corporation. Moore observed that the number of transistors per square unit of surface area in integrated circuits (ICs) doubles approximately every 12 to 18 months. More transistors means more processing power, higher clock speeds, and more features for ICs such as microprocessors, memory chips, and systems on a chip (SoCs). Because the semiconductor fabrication market is highly competitive, semiconductor density often translates into higher profitability. Thus, it is advantageous to densely distributes transistors, interconnects, and other features on a semiconductor device to increase the value of the chip.

However, as Moore's law marches forward, semiconductor manufacturers face new challenges, including limits imposed not only by manufacturing processes, but also by physics itself. One of these limits is that a given dielectric material has a dielectric breakdown voltage. For purposes of very large scale integration (VLSI), where millions or billions of transistors and interconnects may be placed on a single IC, the breakdown voltage may be expressed in terms of volts per nanometer. For example, if a material has a breakdown voltage of approximately 1V per nanometer, then with a potential difference of 5V between two nodes, the nodes need to be separated by at least 5 nm of dielectric material to avoid dielectric breakdown, which may lead to a short.

One challenge for semiconductor manufacturers is the placement of vias, or in other words conductive interconnects that vertically connect one layer of an IC to the layer beneath it. One of the challenges with vias is that real-world manufacturing processes how a margin of uncertainty. The nominal design of a via may place the via exactly over the endpoint of an interconnect trace line, thus leaving sufficient space between that via and another trace line, to ensure that electrical breakdown does not occur between the two conductive traces. But accounting for real-world manufacturing uncertainties, it is possible for that via to stray slightly from its nominal placement. If the via strays slightly down the interconnect, then in many cases no harm is done. But if the via strays even a nanometer or two into the dielectric material separating the 2 trace lines, then there is danger that the via may breach the designed breakdown margin, so that there is a shorting risk between the via and the opposing trace line.

This danger can be mitigated in many cases by extending the trace line further past the intended placement of the via, and then providing sufficient dielectric thickness between the two trace lines to ensure that shorting does not occur. Thus, the via may stray a few nanometers to one side or the other without the risk of shorting. However, by adding those few nanometers of extra trace line on the end of an interconnect, a few nanometers of circuit density are lost. Multiplying those few nanometers by the millions or billions of traces with in the IC, there is an overall loss of both density and attendant profitability of the IC.

Advantageously, this specification provides structures and methods to mitigate the risk of shorting in an IC that do not sacrifice density, or that sacrifice less density. This includes placing an etch-resistant plug between the two trace lines before etching the via. The etch-resistant plug may be made of material that will not be removed by the etching process, so that when the via is formed, even if the via etching strays slightly from its intended position, the hardened plug ensures that conductive metal is not deposited in the dielectric breakdown region.

Certain embodiments may require high aspect ratio deposition of a fillable material that has good etch characteristics, Certain embodiments include patterning of a sacrificial hard mask (HM) material. If the etch profile is controlled properly in this operation, then an atomic layer deposition (ALD)-type film (such as Al2O3, ZrO2, HfO2, or TiO2) may be used for the hardened plug. Alternatively, a spin-on material such as SiC or metal oxide can be considered. Spin-on material deposition is a method of generating SiC (silicon-carbide) thin films by spin coating a solution of the precursor onto a wafer and applying cure treatments to convert it into a SiC. The resulting material is a low-k dielectric with distinct etch properties that enables new patterning schemes, in which SiC is etched selective to other materials such as SiN (silicon nitride) and SiO2 (silicon dioxide). In other embodiments, a metal oxide may also be used.

The cure conditions of a spin-on SiC may also be considered during design. For example, in one embodiment, flowable SiCs can show etch selectivity at 650 C under N2 cure, but shrinkage is about 44%, causing voids. Thus, rapid thermal processing (RTP) may be used with a reactive oxygen plasma, yielding shrinkage on the order of 14%, and resulting in less voiding and good etch selectivity. In general, a designer should choose the reactive species to introduce the proper chemistry.

Embodiments of the present specification include deposition of a hardened plug material after deposition and patterning of a sacrificial hard mask material. Once the sacrificial hard mask material is removed, the plug remains. Metal trace lines may then fill in recesses and be polished according to known methods. Optionally, one or more hard mask materials may then be deposited in recesses above the trace lines. Certain embodiments also disclose the use of two different plug materials within the same process and integrated circuit.

Further embodiments of the specification disclose a hardened “cap” over the plugs described. With the use of a hard cap, the plugs themselves need not be hardened against etching. Rather, the hardening property can be provided by the cap. Caps can be grown or deposited in many different ways. In one embodiment, a selective growth material is used for the plug, and the cap is selectively grown above the plugs.

In another embodiment, an acid-sensitive material may be deposited in a layer above the plug. In a bake-on process, the acid-sensitive material diffuses into the plug. This layer is washed, polished, or etched away. A second material is then deposited over the layer. The second material has the property that it becomes etch or rinse resistant when diffused with the acid-sensitive material. A spin process or other process may then be used to cause the acid-sensitive material to diffuse into the second material. The process may be for a limited time, or with limited intensity, so that the acid-sensitive material diffuses into only the portion of the second material substantially over the plug. A selective rinse or etch is then used to wash away the portions of the second layer that do not have the diffused acid-sensitive material. The remaining portions form etch-hardened caps over the plugs.

The caps formed according to this specification may, in certain embodiments, have a dome shape. Advantageously, the dome shape can be disposed such that, within the expected margin, a metal deposited over the cap will flow downward and away from a shorting region, thus helping the vias to “self-align.”

The description uses the phrases “in an embodiment” or “in embodiments,” which may each refer to one or more of the same or different embodiments. Furthermore, the terms “comprising,” “including,” “having,” and the like, as used with respect to embodiments of the present disclosure, are synonymous. The disclosure may use perspective-based descriptions such as “above,” “below,” “top,” “bottom,” and “side” such descriptions are used to facilitate the discussion and are not intended to restrict the application of disclosed embodiments. The accompanying drawings are not necessarily drawn to scale.

In the following detailed description, various aspects of the illustrative implementations are described using terms commonly employed by those skilled in the art to convey the substance of their work to others skilled in the art. For example, as used herein, a “high-k dielectric” refers to a material having a higher dielectric constant than silicon oxide. In another example, a term “interconnect” is used to describe any element formed of an electrically conductive material for providing electrical connectivity to one or more components associated with an IC or/and between various such components. In general, the “interconnect” may refer to both trenches (also sometimes referred to as “lines”) and vias. In general, a term “trench” is used to describe an electrically conductive element isolated by an interconnect support layer typically comprising an interlayer low-k dielectric that is provided within the plane of an IC chip, Such trenches are typically stacked into several levels. On the other hand, the term “via” is used to describe an electrically conductive element that interconnects two or more trenches of different levels. To that end, vias are provided substantially perpendicularly to the plane of an IC chip. A via may interconnect two trenches in adjacent levels or two trenches in not adjacent levels. A term “metallization stack” refers to a stack of one or more interconnects for providing connectivity to different circuit components of an IC chip.

FIG. 1 is a cross-sectional side view of a metallization stack 100 including an interconnect support layer 102 housing a plurality of electrically conductive interconnects 104, in accordance with various embodiments. Only one interconnect 104 is labeled with a reference numeral in FIG. 1 for ease of illustration, but eight are illustrated in FIG. 1. Although eight interconnects 104 are illustrated in FIG. 1, this is also simply for ease of illustration, and more, or less, than eight interconnects 104 may be provided on the interconnect support layer 102 according to various embodiments of the present disclosure. Furthermore, note that the metallization stack 100 shown in FIG. 1, as well as structures illustrated in FIGS. 2-8A are intended to show relative arrangements of the components therein, and that various metallization stacks, or portions thereof, may include other components that are not illustrated (e.g., electrical contacts to the interconnects 104).

In general, implementations of the disclosure may be formed or carried out on a substrate, such as a semiconductor substrate composed of semiconductor material systems including, for example, N-type or P-type materials systems. In one implementation, the semiconductor substrate may be a crystalline substrate formed using a bulk silicon or a silicon-on-insulator substructure. In other implementations, the semiconductor substrate may be formed using alternate materials, which may or may not be combined with silicon, that include but are not limited to germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, indium gallium arsenide, gallium antimonide, or other combinations of group III-V, group II-VI, or group IV materials. Although a few examples of materials from which the substrate may be formed are described here, any material that may serve as a foundation upon which a semiconductor device may be built falls within the spirit and scope of the present disclosure.

In various embodiments the interconnect support layer 102 may include any such substrate, possibly with some layers and/or devices already formed thereon, that provides a suitable surface for providing the interconnects 104 on. In the example shown in FIG. 1, an etch stop layer 106 is shown to be disposed over the interconnect support layer 102, which layer may serve to prevent or minimize etching into the underlying interconnect support layer 102 during fabrication of the interconnects 104 or any further components associated with an integrated circuit. However, presence of such a layer is entirely optional and embodiments of the present disclosure may be carried out on the interconnect support layer 102 within the etch stop layer 106 shown in FIGS. 1-8A. In other embodiments, other layers, not shown in the present FIGs., may be provided on at least some portions of the interconnect support layer 102 prior to the deposition of the interconnects 104, such as e.g. an insulating layer, such as an oxide isolation layer.

Furthermore, other materials or/and layers, not specifically shown in FIG. 1 may be provided over the interconnects 104 of the metallization stack. One such material is a dielectric material, e.g. including one or more interlayer dielectrics (ILD) layers, that may be deposited over the and in between the interconnects 104 of the metallization stack 100. The ILD layers may be formed using dielectric materials known for their applicability in integrated circuit structures, such as low-k dielectric materials. Examples of dielectric materials that may be used include, but are not limited to, silicon dioxide (SiO2), carbon doped oxide (CDO), silicon nitride, organic polymers such as perfluorocyclobutane or polytetrafluoroethylene, fluorosilicate glass (FSG), and organosilicates such as silsesquioxane, siloxane, or organosilicate glass. The ILD layers may include pores or air gaps to further reduce their dielectric constant.

FIGS. 2-7 illustrate various example stages in the manufacture of a metallization stack including a plurality of electrically conductive interconnects, such as e.g. the metallization stack 100 with the interconnects 104, in accordance with various embodiments. Although the particular manufacturing operations discussed below with reference to FIGS. 2-7 are illustrated as manufacturing a particular embodiment of the metallization stack 100, at least some of these operations and/or operations with minor modifications may be applied to manufacturing many different embodiments of the metallization stack 100, as discussed herein. Any of the elements discussed below with reference to FIGS. 2-7 may take the form of any of the embodiments of those elements discussed above or otherwise disclosed herein.

FIG. 2 illustrates a cross-sectional view of an assembly 202 including an interconnect support layer 102 and an etch stop layer 106 provided thereon. Discussions provided above with respect to the interconnect support layer 102 and the etch stop layer 106 are applicable here and, therefore, in the interests of brevity, are not repeated here.

FIG. 3 illustrates a cross-sectional view of an assembly 204 subsequent to providing a pattern of sacrificial elements 108 over the interconnect support layer 102 of assembly 202 (FIG. 2). Only one sacrificial element 108 is labeled with a reference numeral in FIG. 3 for ease of illustration, but four are illustrated in FIG. 3. Although four sacrificial elements 108 are illustrated in FIG. 3, this is also simply for ease of illustration, and more, or less, than four sacrificial elements 108 may be provided on the interconnect support layer 102 according to various embodiments of the present disclosure.

In some embodiments, the pattern of sacrificial elements 108 may be a plurality of parallel lines having a height (i.e. the dimension in the z-direction of an exemplary reference coordinate system shown in FIG. 3) between 5 and 800 nanometers, including all values and ranges therein, and a width (i.e. the dimension in the y-direction of the exemplary reference coordinate system shown in FIG. 3) between 5 and 300 nanometers, including all values and ranges therein. In other embodiments, any other suitable pattern may be used, selected/designed so that, in subsequent fabrication steps, the electrically conductive material deposited on the sidewalls (i.e. the faces of the elements 108 which are substantially perpendicular to the interconnect support layer 102) of the sacrificial elements 108 will form appropriately shaped and appropriately located interconnects.

In some embodiments, the aspect ratio (i.e. a ratio of height to width) of the sacrificial elements 108 could be between 1 and 10, e.g. between 1 and 5 or between 1 and 3. The sacrificial elements 108 may be spaced by any suitable spacing that would allow depositing electrically conductive material of the desired thickness on the sidewalls of the sacrificial elements 108 so that the electrically conductive material on adjacent sidewalls of two adjacent elements 108 is not touching one another. For example, in some embodiments, the distance between different sacrificial elements 108 may be above 30 nanometers, e.g. above 50 nanometers.

In some embodiments, the sacrificial elements 108 may be formed of a non-metallic material. Since the sacrificial elements 108 will need to later be etched to leave the electrically conductive material deposited on their sidewalls, e.g. using anisotropic etching, etching properties of potential candidate materials are to be considered when selecting a suitable material to be used as the sacrificial elements 108. In addition, etching properties of a potential candidate material for the sacrificial elements 108 should are to be considered in view of a potential candidate electrically conductive material for forming the interconnects as described herein. Preferably the material for the sacrificial elements 108 and the electrically conductive material for the future interconnects 104 have sufficiently distinct etching properties so that etch of the sacrificial elements 108 will not affect, or will only have an adequately small effect, on the electrically conductive material (i.e. these two materials should have high etch selectivity with respect to one another). Besides appropriate etching characteristics, some other considerations in selecting a suitable material for the sacrificial elements 108 may include e.g. possibilities of smooth film formation, low shrinkage and outgassing, and good dielectric properties (such as e.g. low electrical leakage, suitable value of a dielectric constant, and thermal stability). Examples of materials that could be used to form the sacrificial elements 108 include, but are not limited to, silicon dioxide (SiO2), carbon doped oxide (CDO), silicon nitride, organic polymers such as perfluorocyclobutane, polytetrafluoroethylene or poly(methyl methacrylate) (PMMA), fluorosilicate glass (FSG), and organosilicates such as silsesquioxane, siloxane, or organosilicate glass.

In some embodiments, the sacrificial elements 108 may be provided over the interconnect support layer 102 using e.g. chemical vapor deposition or/and plasma-enhanced chemical vapor deposition, in combination with patterning (either before or after the deposition of the material of the sacrificial elements 108), as typically done in conventional processing. In some embodiments, patterning may include any patterning technique employing photoresist or other masks defining the dimensions and location of the sacrificial elements 108 over the interconnect support layer 102. In other embodiments, patterning may include any mask-less patterning technique, such as e.g. electron beam (e-beam) patterning.

FIG. 4 illustrates a cross-sectional view of an assembly 206 subsequent to conformally depositing a layer 110 of electrically conductive material on the sidewalk and in openings between the sacrificial elements 108 of assembly 204 (FIG. 3). Conformal deposition generally refers to deposition of a certain coating (in this case, the electrically conductive material that will form the interconnects 104) on any exposed surface of a given structure (in this case, the interconnect support layer with the sacrificial elements 108 of assembly 204), including on the sidewalls and bottom of any opening formed in/on the structure. A conformal coating may, therefore, be understood as a coating that is applied to exposed surfaces of a given structure, and not, for example, just to horizontal surfaces. In some embodiments, the coating may exhibit a variation in thickness of less than 35%, including all values and ranges from 1% to 35%, such as 10% or less, 15% or less, 20% of less, 25% or less, etc. The conformal coating process may be selected from processes such as e.g. chemical vapor deposition (CVD) or atomic layer deposition (ALD).

In various embodiments, a thickness of the layer 110, in particular the thickness of the layer 110 on the sidewalls of the sacrificial elements 108 (i.e. the dimension in the y-direction of an exemplary reference coordinate system shown in FIG. 3), may take on any suitable values so that, in subsequent fabrication steps, the electrically conductive material deposited on the sidewalls of the sacrificial elements 108 will form interconnects 104 of appropriate dimensions, the latter described in greater detail below.

In some embodiments, an annealing process may be carried out on the layer 110 after its deposition to improve the quality of the electrically conductive material for the future interconnects 104. In various embodiments, the electrically conductive material of the layer 110 may include one or more of aluminum, copper, tungsten, cobalt, ruthenium, nickel, iron, and molybdenum, and/or one or more alloys comprising aluminum, copper, tungsten, cobalt, ruthenium, manganese, magnesium, boron, phosphorus, nitrogen, carbon, and sulfur.

FIG. 5 illustrates a cross-sectional view of an assembly 208 subsequent to anisotropic etch of the layer 110 of the electrically conductive material deposited on the sidewalls and in the openings between the sacrificial elements 108 in assembly 206 (FIG. 4). Any suitable anisotropic etching technique (i.e. etching uniformly in vertical direction) may be used to etch the electrically conductive material of the layer 110 so that the material is only left on the sidewalls, and possibly on top of, the sacrificial elements 108, but not in the openings between the sacrificial elements 108. Dry etching techniques, such as e.g. plasma etching, are typically known to provide finer resolution and directionality of etching than wet etching techniques which typically result in isotropic etching (i.e. etching in all directions). For example, the layer 110 made of metallic aluminum (Al) can be readily and anisotropically etched with chlorine (Cl) plasma by forming volatile Al2Cl6, where volatile Al2Cl6 is removed, resulting in patterned Al that remains only on the sidewalls, and possibly on top of, the sacrificial elements 108. A vertical anisotropic etch of the electrically conductive material of the layer 110 may be performed so that a portion of the electrically conductive material on the sidewalls of the sacrificial elements 108 is removed as well, which may advantageously decrease surface roughness of the electrically conductive material on the sidewalls of the sacrificial elements 108.

FIGS. 4 and 5 illustrate one exemplary embodiment for depositing an electrically conductive material on the sidewalk of the sacrificial elements 108. In other embodiments, other techniques may be used. For example, instead of a conformal deposition process shown in FIG. 4, other processes may be used that would deposit the electrically conductive material directly only, or substantially only, on the sidewalls of the sacrificial elements 108. Such alternative processed may e.g. include physical vapor deposition (PVD) processes such as, magnetron sputtering with a high re-sputter rate with no net deposition on horizontal surfaces and only sidewall deposition, evaporative deposition or e-beam deposition, and may directly result in assembly 208 as shown in FIG. 5 without the need for the anisotropic etch described above. Considerations regarding a thickness of the electrically conductive material on the sidewalls of the sacrificial elements 108, as well as considerations regarding the selection and possible anneal of the electrically conductive material provided above are applicable to such alternative deposition processes and, therefore, in the interests of brevity, are not repeated here.

For any deposition technique used to deposit an electrically conductive material on the sidewalls of the sacrificial elements 108 described above, planarization of assembly 208 may be subsequently performed, in order to expose the material of the sacrificial elements 108 for the subsequent etching of this material. Planarization may be performed using either wet or dry planarization processes. In one embodiment, planarization is performed using chemical mechanical planarization (CMP), which may be understood as a process that utilizes a polishing surface, an abrasive and a slurry to remove the overburden of the electrically conductive material which may cover upper surfaces of the sacrificial elements 108 to expose such surfaces for the subsequent etch.

FIG. 6 illustrates a cross-sectional view of an assembly 210 subsequent to the removal of the sacrificial elements 108 from between the electrically conductive material deposited on the sidewalls of the sacrificial elements 108 in assembly 208 (FIG. 5). In some embodiments, such a removal may include anisotropic etch to vertically etch away the material of the sacrificial elements 108. Etchants used in this etch would be different from those described above for etching the electrically conductive material, because this time, preferably, the electrically conductive material would not be etched. Any substance suitable for anisotropically etching the sacrificial elements 108 may be used in forming assembly 210.

Removal of the sacrificial elements 108 results in forming a pattern of electrically conductive elements, as e.g. shown in assembly 210, which form a plurality of interconnects 104. In fact, assembly 210 shown in FIG. 6 is substantially the same as the metallization stack 100 shown in FIG. 1. In various embodiments, an average width of each interconnect 104 may be between 5 and 30 nanometers, while an average height of each interconnect may be between 5 and 800 nanometers.

FIG. 7 illustrates a cross-sectional view of an assembly 212 subsequent to filling the spaces between interconnects 104 of assembly 210 (FIG. 6) with a suitable dielectric material 112, such as e.g. any of the ILD materials described herein. In some embodiments, the dielectric material 112 may be provided into the spaces between interconnects 104 using e.g. CVD and/or plasma-enhanced CVD, as typically done in conventional processing. In still other embodiments, the dielectric material 112 may include a dielectric material formed in the spaces between interconnects 104 using coating techniques involving cross-linking of liquid precursors into solid dielectric materials.

In some embodiments, some or all of the surfaces of interconnects 104 of assembly 210 may be cleaned or treated prior to applying the dielectric 112, e.g. to reduce surface contamination, minimize interface traps, promote adhesion, and/or decrease interdiffusion of materials.

For example, the surfaces of interconnects 104 may be cleaned using chemical or plasma clean, or applying heat in a controlled environment.

In some embodiments, an “interface layer” may be applied between on interconnects 104 of assembly 210, in particular on the sidewalls of interconnects 104, to prevent, decrease, or minimize spontaneous and uncontrolled formation of other interfacial layers.

In some embodiments, an adhesion promoter or adhesion layer may be applied prior to application of the dielectric 112, in order to promote adhesion between the electrically conductive material of the interconnects 104 and the material(s) of the dielectric 112 filling the space between the interconnects 104. Example materials which could be used to form an adhesion layer between the electrically conductive material of the interconnects and the dielectric 112 include, but are not limited to molecular species such as self-assembled monolayers (SAMs). These molecules typically include a head group, an alkane chain, and an end group. The head group could be a thiol or nitrile which forms a bond with the conductive material. The end group could be an amine, silane, ethoxy silane, chloro silane or amino silane which forms bonds with the dielectric.

In some embodiments, before filling in spaces between the interconnects 104 of assembly 210 with the dielectric material, a diffusion barrier layer may be conformally deposited, using any suitable conformal deposition techniques as described herein, on the sidewalk of at least some, preferably all, of the interconnects 104, for preventing diffusion of the electrically conductive material of the interconnects 104 out of these elements and into the surrounding dielectric material 112. In various embodiments, a diffusion barrier layer may be electrically conductive, semiconducting, or dielectric. Examples of materials that could be used for the diffusion barrier layer include, but are not limited to, one or more of tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), ruthenium (Ru), cobalt (Co), silicon nitride (SiN), silicon carbide (SiC), silicon dioxide (SiO2), aluminum oxide (A12O3), and the like.

In further embodiments, the method may further include providing a barrier-dielectric adhesion layer on sidewalls of at least some of the interconnects 104 covered with a diffusion barrier layer, in order to promote adhesion between the material of the diffusion barrier layer and the material(s) of the dielectric 112 that will fill the space between the interconnects 104. Example materials which could be used to form a barrier-dielectric adhesion layer include, but are not limited to, tantalum, titanium, titanium nitride, tantalum nitride, tungsten nitride, molybdenum nitride, and the like.

After filling in spaces between the electrically conductive elements 104 with the dielectric material 112, optionally, planarization may be performed again, e.g. using any of the planarization techniques described above, to expose the upper surfaces of the interconnects 104 so that the interconnects 104 may be electrically connected to further circuit elements (not specifically shown in FIG. 7).

Fabricating the interconnects 104 by depositing the electrically conductive material of the interconnects 104, typically a metal, in a spacer-like fashion (i.e. as a “spacer” around the sacrificial elements 108), followed by the removal of the sacrificial elements 108, as described above, justifies the name “subtractive metal spacer based deposition” given to the methods of fabricating interconnects described herein. Implementing these methods may allow realizing several advantages, in particular when compared to conventional methods of providing interconnects by, first, depositing a layer of metal, and then patterning the metal to form interconnects of desired shapes and in desired patterns.

One advantage is that the methods described herein do not obscure alignment and metrology marks in the frame of the die during deposition of interconnects.

Another advantage relates to the resulting interconnects having decreased surface roughness on their sidewalls compared to what could be achieved using prior art fabrication methods. In some embodiments, a width of an individual interconnect (i.e. the dimension in the y-direction of the exemplary reference system shown in the FIGS.) formed using the methods described herein, e.g. of an individual interconnect 104, along a height of that interconnect may vary by less than 10 percent, preferably less than 5%, e.g. less than 3 or 2%, of an average width of the interconnect along the height of the interconnect. Having a width of an interconnect varying by less than a certain, relatively small, amount compared to the average width along the height of the interconnect indicates that the sidewalls of the interconnect have relatively low surface roughness. Such relatively slow surface roughness may be advantageously achieved using the methods of forming electrically conductive interconnects as described herein and was not possible to achieve using prior art fabrication techniques.

Metallization stacks as descried herein may be particularly advantageous when used in the metal layers of a microprocessor device for analog circuitry, logic circuitry, or memory circuitry, and may be formed along with existing complementary metal oxide semiconductor (CMOS) processes.

FIG. 8 is a flow diagram of an example method 800 of manufacturing a metallization stack (e.g. the metallization stack 100 including a plurality of electrically conductive interconnects 104), summarizing the subtractive metal spacer based deposition described herein, in accordance with various embodiments. Although the operations of the method 800 are illustrated once each and in a particular order, the operations may be performed in any suitable order and repeated as desired. For example, one or more operations may be performed in parallel to manufacture multiple patterns of interconnects substantially simultaneously. In another example, planarization operations may be performed in a different order, as needed.

At 802, an interconnect support layer may be provided. The interconnect support layer provided at 802 may take the form of any of the embodiments of the interconnect support layer 102 disclosed herein, for example (e.g., any of the embodiments discussed herein with reference to the metallization stack 100 or any of assemblies shown in FIGS. 2-7),

At 804, a pattern of sacrificial non-metal elements may be provided. The sacrificial non-metal elements provided at 804 may take the form of, and be provided according to, any of the embodiments of the sacrificial elements 108 disclosed herein, for example. In some embodiments, the sacrificial elements may be provided at 804 so as to be in contact with the interconnect support layer of 802. In other embodiments, an intermediate material may be disposed between the interconnect support layer and the sacrificial elements, e.g. an etch stop layer or an insulating layer.

At 806, electrically conductive material, e.g. a metal, may be provided on the sidewalk of the sacrificial elements. The electrically conductive material provided at 806 on the sidewalls of the sacrificial elements may take the form of, and be provided according to, any of the embodiments disclosed herein.

At 808, the sacrificial elements may be removed from between the electrically conductive material provided on their sidewalls. Removal of the sacrificial elements at 808 may be performed according to any of the embodiments disclosed herein.

At optional process 810, a diffusion barrier liner may be deposited over the electrically conductive elements remaining after the removal of the sacrificial elements at 808. The diffusion barrier liner provided at 810 may take the form of, and be provided according to, any of the embodiments of the diffusion barrier liner disclosed herein.

At optional process 812, a dielectric material, e.g. an ILD, may be deposited between, and possibly over, the electrically conductive elements remaining after the removal of the sacrificial elements at 808. The dielectric material may, optionally, be planarized to expose the upper surfaces of the electrically conductive elements from the surrounding dielectric. The dielectric material provided at 812, as well as the planarization thereof, may take the form of, and be provided and/or planarized according to, any of the embodiments of the dielectric material 112 disclosed herein.

The method 800 may further include other manufacturing operations related to fabrication of other components of a metallization stack 100 or any devices that include such a stack. For example, the method 800 may various cleaning operations, and/or operations for incorporating the metallization stack 100 in, or with, an IC component.

FIG. 9 is a top view illustration of selected elements of an integrated circuit 900 according to one or more examples of the present specification. In this example, integrated circuit 900 is built on a substrate 902, which could also be an interlayer dielectric (IMD) as disclosed herein. Disposed on a substrate 902 are a plurality of conductive metal lines 904, which may be the metallic trace lines of various interconnects on the circuit. Note that between trace lines 904-1 and 904-2 there is a safe gap defined. The safe gap is selected to provide sufficient dielectric separation between trace line 904-1 and trace line 904-2 that an operational voltage of the circuit will not cause a short between the two trace lines by causing a dielectric breakdown. This distance may also be selected to ensure that not only will an instantaneous breakdown not occur, but over the designed lifetime of the IC, dielectric breakdown is reasonably calculated to not occur. This may be a key reliability factor that can affect the reputation of the manufacturer.

In this case, a via 906 is also to be placed, for example connecting interconnect trace line 904-2 to traces above or below the layer of substrate 902.

FIG. 9 illustrates a nominal placement of via 906, in which via 906 is placed slightly within trace line 904-2. As long as via 906 stays within trace line 904-2, the safe gap is maintained, and there is no shorting between the two trace lines.

However, FIG. 9 also illustrates a misaligned via 906-2, which strays slightly over the end of trace line 904-2. The via may stray only a few nanometers, but that may be sufficient to create a shorting risk because a safe gap is not been maintained between trace line 904-1 and via 906-2. Thus, in operation, a short may develop between the two, causing the integrated circuit to fail. Note that this short may develop immediately, such as in response to a normal operating voltage of the circuit, or the short may develop over time as the too-small dielectric is stressed by voltage, thus creating a long-term reliability issue. Thus, the shorting risk is not only an immediate or one-time risk, but may also affect the longevity of the integrated circuit.

FIG. 10 illustrates a method of maintaining a safe gap by using “loose” interconnect placement. In this case, interconnect 904-2 is designed to be slightly longer than in FIG. 9, so that the end of interconnect 904-2 extends a few nanometers outside of the nominal placement of via 906-1. A safe gap is still maintained between interconnect 904-2 and 904-1.

The benefit of this can be seen in the case of misaligned via 906-2, which has strayed a few nanometers to the left from its intended placement. However, because some additional safety margin has been built in to the length of interconnect 904-2, a safe gap is still maintained. Thus, the integrity and reliability of the integrated circuit is maintained both instantaneously and over time.

One disadvantage to the configuration of FIG. 10, however, is that semiconductor density is compromised. It should be noted that only one trace line is shown here with the increased margin, but in fact in a real-world application, this increase of safety margin may need to be repeated millions or billions of times to ensure that the circuit functions correctly. Thus, semiconductor density is sacrificed, and the IC must either be made substantially larger, or it must include fewer transistors. Thus, the integrated circuit may be less profitable than it would be if a greater density could be maintained.

FIG. 11 illustrates a structure and method of placement of a hardened plug that preserves the safety margin without loss of chip density, or with less loss of chip density.

In the example of FIG. 11, a via 906 is shown etched through a hard mask 1104, down to a trace line 904. In this illustration, it can be seen that via 906 has been misaligned slightly to the left as in the previous two figures. Thus, in this cutaway side view, it can be seen that via 906 is a few nanometers beyond the edge of trace line 904-2, and if via 906 is permitted to extend all the way down to the level of interconnect 904-1, there is a shorting risk.

However, this risk can be obviated by the placement of the plug 1106 as illustrated in this figure. As discussed herein, plug 1106 may be constructed of an etch-resistant material so that when a conduit is etched for via 906, hardened plug 1106 is not etched away. When via 906 is filled with conductive metal, contact is still made with trace line 904-2 as intended. However, hardened plug 1106 maintains a sufficient dielectric separation between trace line 904-2 and 904-1, so that there is less danger of dielectric breakdown.

FIG. 12a is a flowchart of a method 1200 of manufacturing an integrated circuit, including one or more hardened or hardened plugs with caps, according to one or more examples of the present specification. It should be noted that many of the operations of FIG. 1200 have corresponding operations in FIG. 800, and for purposes of brevity and clarity, those operations may be described in less detail in connection with FIG. 12. However, this should not be construed to imply that the operations in FIG. 12 need be different or separate from the operations the corresponding operations disclosed in connection with FIG. 8. In general, those with skill in the art will recognize correspondence between operations in FIG. 12 and in FIG. 8, and where necessary, may refer to FIG. 8 for additional detail of certain operations.

FIG. 13 includes corresponding illustrations of the various operations of method 1200, and is labeled appropriately. To further illustrate the method, certain elements in FIG. 13 are labeled to provide points of reference. These illustrations should not be construed to either require or exclude correlation with operations disclosed in FIGS. 2-8, and the corresponding description therein.

It should also be noted that the operations disclosed in FIG. 12a and elsewhere are shown in a particular order to facilitate discussion and illustrate one embodiment. This order of operations should not be construed to be required or limiting. Those with skill in the art will recognize that certain operations can be performed in a different order.

Turning to FIG. 12a , in connection with FIG. 13, in block 1202, after ordinary deposition of an ILD 1102 on a substrate, a trench is etched for containing a plug 1106. Note that in FIG. 13, a dotted outline illustrates material that may be located behind the facing plane of the illustration.

In block 1204, plug 1106 is deposited and patterned. As described elsewhere herein, plug 1106 may be a material such as SiC, a metal oxide, or an oxide of hafnium. In some cases, plug 1106 is “hardened” in the sense that it is at least selectively etch-resistant (relative to materials that may be deposited above it). In other embodiments, plug 1106 may not be hardened. Rather, it may be, for example, of the same material as ILD 1102, or of a different ILD material. The use of a cap 1306, which may be hardened, may reduce reliance on hardening of plug 1106.

In block 1206, a metal layer 1304 may be deposited on ILD 1102. This may be metal that can be used for interconnects on the circuit. Note that in certain embodiment, metal 1304 may be deposited only within defined trenches, or may be otherwise patterned. Plug 1206 may be provided to prevent metal traces from shorting to each other, including shorting by exceeding a dielectric breakdown of the ILD material.

In block 1208, a hardened dielectric cap 1306 is selectively grown over plug 1106. The cap material may be selected to selectively grow over cap, and may be a material such as an oxide of hafnium (HfOx), such as hafnium dioxide (HfO2). The cap material may be universally or selectively etch resistant, and in some embodiments, cap 1306 may have a substantially domed shape, with a peak of the dome being disposed outside of the expected margin of variance for next-layer metal deposition. This ensures that any metal deposited within this margin will trend downward, away from the opposing metal traces, where it may cause a short.

In block 1210, the next-layer via is patterned, such as by depositing a next-layer ILD, and etching trenches for metallic trace lines and vias. Note particularly that during the etching process, trench 1308 is slightly misaligned from its nominal position, which may be directly over the trace line beneath it (904-2). However, cap 1306 enables trench 1308 to self-align back toward trace line 904-2. The etching trends away from trace line 904-1, and any metal deposited in trench 1308 will trend toward trace line 904-2, thus self-aligning.

In block 1212, conductive metal is deposited in the trenches previous etched in block 1210. Because plug 1106 and cap 1306 provide sufficient electrical isolation, there is reduced or eliminated danger of via 906-1 shorting to trace line 904-1.

In block 1298, the method is done.

Turning to FIG. 12b , in conjunction with FIG. 14, a method 1201 is disclosed, illustrating an alternative method of providing a cap 1306, which may be used instead of or in conjunction with method 1200 of FIG. 12 a.

In certain embodiments of this method, blocks 1214 1218 may correspond substantially to blocks 1202-1206 of method 1200. For simplicity of the illustration, these blocks are not illustrated again in FIG. 14. However, this should not be understood as implying that these blocks must necessarily be identical, or that they must occur in the same order. Rather, there is a variation of embodiments and examples that cover blocks 1202-1206 of method 1200, and blocks 1214-1218 may generally fall within that realm of variation.

In block 1222, as illustrated in FIG. 14, metal layer 1304 is coated with an acid-sensitive spin-on material 1402. This acid-sensitive spin-on material may be, in one embodiment, an oxide of hafnium, such as hafnium dioxide (HfO2). Acid-sensitive spin-on material 1402 may be selected to impart desired properties to a next-layer dielectric (NLD) 1404, which may be the same or different from ILD 1102. Specifically, the desired property may be that when NLD 1404 is doped or diffused with material 1402, NLD 1404 becomes selectively or generally etch-resistant, hardened, rinse-resistant, or otherwise assumes the desired properties of cap 1306.

In block 1224, a process such as a bake-on process is used to diffuse material 1402 into plug 1106. The result is that material 1402 is now “stored” in plug 1106.

In block 1226, a process such as spin-coating or any other suitable process may be used to deposit NLD 1404 onto the next layer. If spin-coating is used, advantageously, material 1402 diffuses out into a selected region of NLD 1404. Note that spin-coating is used as an example of a process that simultaneously deposits the layer, and also diffuses out material 1402, but other combinations of processes may be used.

The result of block 1404 is that a selected area of NLD 1404 is now treated with material 1402, being generally the region that forms a cap around plug 1106.

In block 1228, untreated portions of NLD 1404 are removed, such as by a rinse process. The treatments of portions of NLD 1404 with material 1402 has made the portion forming cap 1306 resistant to rinsing, and thus this portion remains. In other embodiments, other selective removal processes may be employed, such as a selective etch, wherein the treated portion of NLD 1404 is etch resistant to the etchant used.

In some embodiments, the end result of this process may be to create a cap 1306 of a hafnium oxide, or some metal oxide.

FIGS. 15a and 15b illustrates an alternative method of the present specification that employs directed self-assembly (DSA). DSA is a technique of defining a grid over a wafer under process and selectively depositing materials over portions of the grid.

The operations shown here are shown from three perspectives, namely a top view, a cutaway view along axis A-A′, and a cutaway view along axis B-B′. Dotted outlines illustrate features that may appear behind but not on the same plane as the cutaway.

At 1, ordinary deposition and patterning occurs, such as is described in portions of FIGS. 12a and 12b . This includes deposition and patterning of a plug 1106, as described above.

At 2, directed self-assembly (DSA) is used to deposit a second layer, such as a hard mask 1504, over portions of the layer, specifically in this case over ILD 1102. Note that DSA enables placement of hard mask 1504 over ILD 1102 without depositing it over metallic trace lines 1304.

At 3, plug 1306 is selectively grown over plug 1106 either via a DSA process, or via other methods disclosed herein.

At 4, the next layer via 906 is patterned, using a 3-side (also known as three-parameter) confinement.

The result of the foregoing processes is disclosed in FIG. 16, in which a an example integrated circuit is disclosed, including metallic trace lines 904-1 and 904-2, separated by a dielectric plug 1106. Dielectric plug 1106 is capped by dielectric cap 1306, which self-aligns via 906-2.

FIGS. 17A and 17B are top views of a wafer 1700 and dies 1702 that may include one or more metallization stacks in accordance with any of the embodiments disclosed herein. The wafer 1700 may be composed of semiconductor material and may include one or more dies 1702 having IC structures formed on a surface of the wafer 1700. Each of the dies 1702 may be a repeating unit of a semiconductor product that includes any suitable IC (e.g.,. ICs including one or more components that include one or more metallization stacks 100). After the fabrication of the semiconductor product is complete (e.g., after manufacture of a metallization stack 100 in a particular electronic component, e.g. in a transistor or in a memory device), the wafer 1700 may undergo a singulation process in which each of the dies 1702 is separated from one another to provide discrete “chips” of the semiconductor product. In particular, devices that include a metallization stack as disclosed herein may take the form of the wafer 1700 (e.g., not singulated) or the form of the die 1702 (e.g., singulated). The die 1702 may include one or more transistors (e.g., one or more of the transistors 1840 of FIG. 18, discussed below) and/or supporting circuitry to route electrical signals to the transistors, as well as any other IC components (e.g., one or more of the interconnects discussed herein, which may take the form of any of the metallization stacks described herein). In some embodiments, the wafer 1700 or the die 1702 may include a memory device (e.g., a static random access memory (SRAM) device), a logic device (e.g., an AND, OR, NAND, or NOR gate), or any other suitable circuit element. Multiple ones of these devices may be combined on a single die 1702. For example, a memory array formed by multiple memory devices may be formed on a same die 1702 as a processing device (e.g., processor 2002 of FIG. 20) or other logic that is configured to store information in the memory devices or execute instructions stored in the memory array.

FIG. 18 is a cross-sectional side view of an IC device 1800 that may include one or more metallization stacks in accordance with any of the embodiments disclosed herein. The IC device 1800 may be formed on a substrate 1802 (e.g., the wafer 1700 of FIG. 17A) and may be included in a die (e.g., the die 1702 of FIG. 178). The substrate 1802 may be any substrate as described herein. The substrate 1802 may be part of a singulated die (e.g., the dies 1702 of FIG. 178) or a wafer (e.g., the wafer 1700 of FIG. 17A).

The IC device 1800 may include one or more device layers 1804 disposed on the substrate 1802. The device layer 1804 may include features of one or more transistors 1840 (e.g., metal oxide semiconductor field-effect transistors (MOSFETs)) formed on the substrate 1802. The device layer 1804 may include, for example, one or more source and/or drain (S/D) regions 1820, a gate 1822 to control current flow in the transistors 1840 between the S/D regions 1820, and one or more S/D contacts 1824 to route electrical signals to/from the S/D regions 1820. The transistors 1840 may include additional features not depicted for the sake of clarity, such as device isolation regions, gate contacts, and the like. The transistors 1840 are not limited to the type and configuration depicted in FIG. 18 and may include a wide variety of other types and configurations such as, for example, planar transistors, non-planar transistors, or a combination of both. Non-planar transistors may include FinFET transistors, such as double-gate transistors or tri-gate transistors, and wrap-around or all-around gate transistors, such as nanoribbon and nanowire transistors.

Each transistor 1840 may include a gate 1822 formed of at least two layers, a gate electrode layer and a gate dielectric layer.

The gate electrode layer may be formed on the gate interconnect support layer and may consist of at least one P-type workfunction metal or N-type workfunction metal, depending on whether the transistor is to be a PMOS or an NMOS transistor, respectively. In some implementations, the gate electrode layer may consist of a stack of two or more metal layers, where one or more metal layers are workfunction metal layers and at least one metal layer is a fill metal layer. Further metal layers may be included for other purposes, such as a barrier layer or/and an adhesion layer.

For a PMOS transistor, metals that may be used for the gate electrode include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, and conductive metal oxides, e.g., ruthenium oxide. A P-type metal layer will enable the formation of a PMOS gate electrode with a workfunction that is between about 4.9 electron Volts (eV) and about 5.2 eV. For an NMOS transistor, metals that may be used for the gate electrode include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, and carbides of these metals such as hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide. An N-type metal layer will enable the formation of an NMOS gate electrode with a workfunction that is between about 19 eV and about 4.2 eV.

In some embodiments, when viewed as a cross section of the transistor 1840 along the source-channel-drain direction, the gate electrode may be formed as a U-shaped structure that includes a bottom portion substantially parallel to the surface of the substrate and two sidewall portions that are substantially perpendicular to the top surface of the substrate. In other embodiments, at least one of the metal layers that form the gate electrode may simply be a planar layer that is substantially parallel to the top surface of the substrate and does not include sidewall portions substantially perpendicular to the top surface of the substrate. In other embodiments, the gate electrode may be implemented as a combination of U-shaped structures and planar, non-U-shaped structures. For example, the gate electrode may be implemented as one or more U-shaped metal layers formed atop one or more planar, non-U-shaped layers. In some embodiments, the gate electrode may consist of a V-shaped structure (e.g., when a fin of a finFET transistor does not have a “flat” upper surface, but instead has a rounded peak).

Generally, the gate dielectric layer of a transistor 1840 may include one layer or a stack of layers, and the one or more layers may include silicon oxide, silicon dioxide, and/or a high-k dielectric material. The high-k dielectric material included in the gate dielectric layer of the transistor 1840 may include elements such as hafnium, silicon, oxygen, titanium, tantalum, lanthanum, aluminum, zirconium, barium, strontium, yttrium, lead, scandium, niobium, and zinc. Examples of high-k materials that may be used in the gate dielectric layer include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate, In some embodiments, an annealing process may be carried out on the gate dielectric layer to improve its quality when a high-k material is used.

The S/D regions 1820 may be formed within the substrate 1802 adjacent to the gate 1822 of each transistor 1840, using any suitable processes known in the art. For example, the SID regions 1820 may be formed using either an implantation/diffusion process or a deposition process. In the former process, dopants such as boron, aluminum, antimony, phosphorous, or arsenic may be ion-implanted into the substrate 1802 to form the S/D regions 1820. An annealing process that activates the dopants and causes them to diffuse farther into the substrate 1802 may follow the ion implantation process. In the latter process, an epitaxial deposition process may provide material that is used to fabricate the SID regions 1820. In some implementations, the SID regions 1820 may be fabricated using a silicon alloy such as silicon germanium or silicon carbide. In some embodiments, the epitaxially deposited silicon alloy may be doped in situ with dopants such as boron, arsenic, or phosphorous. In some embodiments, the S/D regions 1820 may be formed using one or more alternate semiconductor materials such as germanium or a group III-V material or alloy. In further embodiments, one or more layers of metal and/or metal alloys may be used to form the SID regions 1820. In some embodiments, an etch process may be performed before the epitaxial deposition to create recesses in the substrate 1802 in which the material for the S/D regions 1820 is deposited.

Electrical signals, such as power and/or input/output (I/O) signals, may be routed to and/or from the transistors 1840 of the device layer 1804 through one or more interconnect layers disposed on the device layer 1804 (illustrated in FIG. 18 as interconnect layers 1806-1810). For example, electrically conductive features of the device layer 1804 (e.g., the gate 1822 and the S/D contacts 1824) may be electrically coupled with the interconnect structures 1828 of the interconnect layers 1806-1810. The one or more interconnect layers 1806-2010 may form an interlayer dielectric (ILD) stack 1819 of the IC device 1800. One or more of the interconnect layers 1806-1810 may take the form of any of the embodiments of the metallization stacks disclosed herein, for example any of the embodiments discussed herein with reference to the metallization stack 100 or any of assemblies shown in FIGS. 2-8.

The interconnect structures 1828 may be arranged within the interconnect layers 1806-2010 to route electrical signals according to a wide variety of designs (in particular, the arrangement is not limited to the particular configuration of interconnect structures 1828 depicted in FIG. 19). Although a particular number of interconnect layers 1806-2010 is depicted in FIG. 19, embodiments of the present disclosure include IC devices having more or fewer interconnect layers than depicted.

In some embodiments, the interconnect structures 1828 may include trench structures 1828 a (sometimes referred to as “lines”) and/or via structures 1828 b (sometimes referred to as “holes”) filled with an electrically conductive material such as a metal. The trench structures 1828 a may be arranged to route electrical signals in a direction of a plane that is substantially parallel with a surface of the substrate 1802 upon which the device layer 1804 is formed. For example, the trench structures 1828 a may route electrical signals in a direction in and out of the page from the perspective of FIG. 18. The via structures 1828 b may be arranged to route electrical signals in a direction of a plane that is substantially perpendicular to the surface of the substrate 1802 upon which the device layer 1804 is formed. In some embodiments, the via structures 1828 b may electrically couple trench structures 1828 a of different interconnect layers 1806-2010 together.

The interconnect layers 1806-1810 may include a dielectric material 1826 disposed between the interconnect structures 1828, as shown in FIG. 18. The dielectric material 1826 may take the form of any of the embodiments of the dielectric material provided between the interconnects of the metallization stacks disclosed herein, for example any of the embodiments discussed herein with reference to the dielectric material 112, the metallization stack 100 or any of assemblies shown in FIGS. 2-8.

In some embodiments, the dielectric material 1826 disposed between the interconnect structures 1828 in different ones of the interconnect layers 1806-1810 may have different compositions. In other embodiments, the composition of the dielectric material 1826 between different interconnect layers 1806-1810 may be the same.

A first interconnect layer 1806 (referred to as Metal 1 or “M1”) may be formed directly on the device layer 1804. In some embodiments, the first interconnect layer 1806 may include trench structures 1828 a and/or via structures 1828 b, as shown. The trench structures 1828 a of the first interconnect layer 1806 may be coupled with contacts (e.g., the S/D contacts 1824) of the device layer 1804.

A second interconnect layer 1808 (referred to as Metal 2 or “M2”) may be formed directly on the first interconnect layer 1806. In some embodiments, the second interconnect layer 1808 may include via structures 1828 b to couple the trench structures 1828 a of the second interconnect layer 1808 with the trench structures 1828 a of the first interconnect layer 1806. Although the trench structures 1828 a and the via structures 1828 b are structurally delineated with a line within each interconnect layer (e.g., within the second interconnect layer 1808) for the sake of clarity, the trench structures 1828 a and the via structures 1828 b may be structurally and/or materially contiguous (e.g., simultaneously filled during a dual-damascene process) in some embodiments.

A third interconnect layer 1810 (referred to as Metal 3 or “M3”) (and additional interconnect layers, as desired) may be formed in succession on the second interconnect layer 1808 according to similar techniques and configurations described in connection with the second interconnect layer 1808 or the first interconnect layer 1806.

The IC device 1800 may include a solder resist material 1834 (e.g., polyimide or similar material) and one or more bond pads 1836 formed on the interconnect layers 1806-1810. The bond pads 1836 may be electrically coupled with the interconnect structures 1828 and configured to route the electrical signals of the transistor(s) 1840 to other external devices. For example, solder bonds may be formed on the one or more bond pads 1836 to mechanically and/or electrically couple a chip including the IC device 1800 with another component (e.g., a circuit board). The IC device 1800 may have other alternative configurations to route the electrical signals from the interconnect layers 1806-4810 than depicted in other embodiments. For example, the bond pads 1836 may be replaced by or may further include other analogous features (e.g., posts) that route the electrical signals to external components.

FIG. 19 is a cross-sectional side view of an IC device assembly 1900 that may include components having or being associated with (e.g. being electrically connected by means of) one or more metallization stacks in accordance with any of the embodiments disclosed herein. The IC device assembly 1900 includes a number of components disposed on a circuit board 1902 (which may be, e.g., a motherboard). The IC device assembly 1900 includes components disposed on a first face 1940 of the circuit board 1902 and an opposing second face 1942 of the circuit board 1902; generally, components may be disposed on one or both faces 1940 and 1942. In particular, any suitable ones of the components of the IC device assembly 1900 may include any of the metallization stacks 100 disclosed herein.

In some embodiments, the circuit board 1902 may be a printed circuit board (PCB) including multiple metal layers separated from one another by layers of dielectric material and interconnected by electrically conductive vias. Any one or more of the metal layers may be formed in a desired circuit pattern to route electrical signals (optionally in conjunction with other metal layers) between the components coupled to the circuit board 1902. In other embodiments, the circuit board 1902 may be a non-PCB substrate.

The IC device assembly 1900 illustrated in FIG. 19 includes a package-on-interposer structure 1936 coupled to the first face 1940 of the circuit board 1902 by coupling components 1916. The coupling components 1916 may electrically and mechanically couple the package-on-interposer structure 1936 to the circuit board 1902, and may include solder balls (as shown in FIG. 19), male and female portions of a socket, an adhesive, an underfill material, and/or any other suitable electrical and/or mechanical coupling structure.

The package-on-interposer structure 1936 may include an IC package 1920 coupled to an interposer 1904 by coupling components 1918. The coupling components 1918 may take any suitable form for the application, such as the forms discussed above with reference to the coupling components 1916. Although a single IC package 1920 is shown in FIG. 19, multiple IC packages may be coupled to the interposer 1904; indeed, additional interposers may be coupled to the interposer 1904. The interposer 1904 may provide an intervening substrate used to bridge the circuit board 1902 and the IC package 1920. The IC package 1920 may be or include, for example, a die (the die 1702 of FIG. 17B), an IC device (e.g., the IC device 1800 of FIG. 18), or any other suitable component. Generally, the interposer 1904 may spread a connection to a wider pitch or reroute a connection to a different connection, For example, the interposer 1904 may couple the IC package 1920 (e.g., a die) to a ball grid array (BGA) of the coupling components 1916 for coupling to the circuit board 1902. In the embodiment illustrated in FIG. 19, the IC package 1920 and the circuit board 1902 are attached to opposing sides of the interposer 1904; in other embodiments, the IC package 1920 and the circuit board 1902 may be attached to a same side of the interposer 1904. In some embodiments, three or more components may be interconnected by way of the interposer 1904.

The interposer 1904 may be formed of an epoxy resin, a fiberglass-reinforced epoxy resin, a ceramic material, or a polymer material such as polyimide. In some implementations, the interposer 1904 may be formed of alternate rigid or flexible materials that may include the same materials described above for use in a semiconductor substrate, such as silicon, germanium, and other group III-V and group IV materials. The interposer 1904 may include metal interconnects 1908 and vias 1910, including but not limited to through-silicon vias (TSVs) 1906. The interposer 1904 may further include embedded devices 1914, including both passive and active devices. Such devices may include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, electrostatic discharge (ESD) devices, and memory devices. More complex devices such as radio-frequency (RF) devices, power amplifiers, power management devices, antennas, arrays, sensors, and microelectromechanical systems (MEMS) devices may also be formed on the interposer 1904. The package-on-interposer structure 1936 may take the form of any of the package-on-interposer structures known in the art.

The IC device assembly 1900 may include an IC package 1924 coupled to the first face 1940 of the circuit board 1902 by coupling components 1922. The coupling components 1922 may take the form of any of the embodiments discussed above with reference to the coupling components 1916, and the IC package 1924 may take the form of any of the embodiments discussed above with reference to the IC package 1920.

The IC device assembly 1900 illustrated in FIG. 19 includes a package-on-package structure 1934 coupled to the second face 1942 of the circuit board 1902 by coupling components 1928. The package-on-package structure 1934 may include an IC package 1926 and an IC package 1932 coupled together by coupling components 1930 such that the IC package 1926 is disposed between the circuit board 1902 and the IC package 1932. The coupling components 1928 and 1930 may take the form of any of the embodiments of the coupling components 1916 discussed above, and the IC packages 1926 and 1932 may take the form of any of the embodiments of the IC package 1920 discussed above. The package-on-package structure 1934 may be configured in accordance with any of the package-on-package structures known in the art.

FIG. 20 is a block diagram of an example computing device 2000 that may include one or more components including one or more metallization stacks in accordance with any of the embodiments disclosed herein. For example, any suitable ones of the components of the computing device 2000 may include a die (e.g., the die 1702 of FIG. 17B) having one or more metallization stacks 100. Any one or more of the components of the computing device 2000 may include, or be included in, an IC device 1800 (FIG. 18). Any one or more of the components of the computing device 2000 may include, or be included in, an IC device assembly 1900 (FIG. 19).

A number of components are illustrated in FIG. 20 as included in the computing device 2000, but any one or more of these components may be omitted or duplicated, as suitable for the application. In some embodiments, some or all of the components included in the computing device 2000 may be attached to one or more motherboards. In some embodiments, some or all of these components are fabricated onto a single system-on-a-chip (SoC) die.

Additionally, in various embodiments, the computing device 2000 may not include one or more of the components illustrated in FIG. 20, but the computing device 2000 may include interface circuitry for coupling to the one or more components. For example, the computing device 2000 may not include a display device 2006, but may include display device interface circuitry (e.g., a connector and driver circuitry) to which a display device 2006 may be coupled. In another set of examples, the computing device 2000 may not include an audio input device 2024 or an audio output device 2008, but may include audio input or output device interface circuitry (e.g., connectors and supporting circuitry) to which an audio input device 2024 or audio output device 2008 may be coupled.

The computing device 2000 may include a processing device 2002 (e.g., one or more processing devices). As used herein, the term “processing device” or “processor” may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory. The processing device 2002 may include one or more digital signal processors (DSPs), application-specific integrated circuits (ASICs), central processing units (CPUs), graphics processing units (GPUs), cryptoprocessors (specialized processors that execute cryptographic algorithms within hardware), server processors, or any other suitable processing devices. The computing device 2000 may include a memory 2004, which may itself include one or more memory devices such as volatile memory (e.g., dynamic random access memory (DRAM)), nonvolatile memory (e.g., read-only memory (ROM)), flash memory, solid state memory, and/or a hard drive. In some embodiments, the memory 2004 may include memory that shares a die with the processing device 2002. This memory may be used as cache memory and may include embedded dynamic random access memory (eDRAM) or spin transfer torque magnetic random-access memory (STT-MRAM).

In some embodiments, the computing device 2000 may include a communication chip 2012 (e.g., one or more communication chips). For example, the communication chip 2012 may be configured for managing wireless communications for the transfer of data to and from the computing device 2000. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a nonsolid medium. The term does not imply that associated devices do not contain any wires, although in some embodiments they might not.

The communication chip 2012 may implement any of a number of wireless standards or protocols, including but not limited to Institute for Electrical and Electronic Engineers (IEEE) standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) project along with any amendments, updates, and/or revisions (e.g., advanced LTE project, ultramobile broadband (UMB) project (also referred to as “3GPP2”), etc.). IEEE 802.16 compatible Broadband Wireless Access (BWA) networks are generally referred to as WiMAX networks, an acronym that stands for Worldwide Interoperability for Microwave Access, which is a certification mark for products that pass conformity and interoperability tests for the IEEE 802.16 standards. The communication chip 2012 may operate in accordance with a Global System for Mobile Communication (GSM), General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network. The communication chip 2012 may operate in accordance with Enhanced Data for GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). The communication chip 2012 may operate in accordance with Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Digital Enhanced Cordless Telecommunications (DECT), Evolution-Data Optimized (EV-DO), and derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The communication chip 2012 may operate in accordance with other wireless protocols in other embodiments. The computing device 2000 may include an antenna 2022 to facilitate wireless communications and/or to receive other wireless communications (such as AM or FM radio transmissions).

In some embodiments, the communication chip 2012 may manage wired communications, such as electrical, optical, or any other suitable communication protocols (e.g., the Ethernet). As noted above, the communication chip 2012 may include multiple communication chips. For instance, a first communication chip 2012 may be dedicated to shorter-range wireless communications such as Wi-Fi or Bluetooth, and a second communication chip 2012 may be dedicated to longer-range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, or others. In some embodiments, a first communication chip 2012 may be dedicated to wireless communications, and a second communication chip 2012 may be dedicated to wired communications.

The computing device 2000 may include battery/power circuitry 2014. The battery/power circuitry 2014 may include one or more energy storage devices (e.g., batteries or capacitors) and/or circuitry for coupling components of the computing device 2000 to an energy source separate from the computing device 2000 (e.g., AC line power).

The computing device 2000 may include a display device 2006 (or corresponding interface circuitry, as discussed above). The display device 2006 may include any visual indicators, such as a heads-up display, a computer monitor, a projector, a touchscreen display, a liquid crystal display (LCD), a light-emitting diode display, or a flat panel display, for example.

The computing device 2000 may include an audio output device 2008 (or corresponding interface circuitry, as discussed above). The audio output device 2008 may include any device that generates an audible indicator, such as speakers, headsets, or earbuds, for example.

The computing device 2000 may include an audio input device 2024 (or corresponding interface circuitry, as discussed above). The audio input device 2024 may include any device that generates a signal representative of a sound, such as microphones, microphone arrays, or digital instruments (e.g., instruments having a musical instrument digital interface (MIDI) output).

The computing device 2000 may include a global positioning system (GPS) device 2018 (or corresponding interface circuitry, as discussed above). The GPS device 2018 may be in communication with a satellite-based system and may receive a location of the computing device 2000, as known in the art.

The computing device 2000 may include another output device 2010 (or corresponding interface circuitry, as discussed above). Examples of the other output device 2010 may include an audio codec, a video codec, a printer, a wired or wireless transmitter for providing information to other devices, or an additional storage device.

The computing device 2000 may include another input device 2020 (or corresponding interface circuitry, as discussed above). Examples of the other input device 2020 may include an accelerometer, a gyroscope, a compass, an image capture device, a keyboard, a cursor control device such as a mouse, a stylus, a touchpad, a bar code reader, a Quick Response (QR) code reader, any sensor, or a radio frequency identification (REICH) reader.

The computing device 2000 may have any desired form factor, such as a hand-held or mobile computing device (e.g., a cell phone, a smart phone, a mobile Internet device, a music player, a tablet computer, a laptop computer, a netbook computer, an ultrabook computer, a personal digital assistant (PDA), an ultramobile personal computer, etc.), a desktop computing device, a server or other networked computing component, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a vehicle control unit, a digital camera, a digital video recorder, or a wearable computing device. In some embodiments, the computing device 2000 may be any other electronic device that processes data.

Numerous other changes, substitutions, variations, alterations, and modifications may be ascertained to one skilled in the art and it is intended that the present disclosure encompass all such changes, substitutions, variations, alterations, and modifications as falling within the scope of the appended claims. In order to assist the United States Patent and Trademark Office (USPTO) and, additionally, any readers of any patent issued on this application in interpreting the claims appended hereto, Applicant wishes to note that the Applicant: (a) does not intend any of the appended claims to invoke paragraph six (6) of 35 U. S. C. section 112 (pre-AIA) or paragraph (f) of the same section (post-AIA), as it exists on the date of the filing hereof unless the words “means for” or “steps for” are specifically used in the particular claims; and (b) does not intend, by any statement in the specification, to limit this disclosure in any way that is not otherwise expressly reflected in the appended claims.

EXAMPLE IMPLEMENTATIONS

There is disclosed in one example, an integrated circuit, comprising: a first layer having a dielectric, a first conductive interconnect and a second conductive interconnect; a second layer having a third conductive interconnect; a conductive via between the first layer and the second layer to electrically couple the second conductive interconnect to the third conductive interconnect; a dielectric plug disposed vertically between the first layer and second layer and disposed to prevent the via from electrically shorting to the first conductive interconnect; and a dielectric cap covering the dielectric plug.

There is also disclosed an example, wherein the dielectric cap is a substantially domed shape.

There is also disclosed an example, wherein the dielectric cap comprises a selective growth material.

There is also disclosed an example, wherein the dielectric cap comprises a base material diffused with an additive to create wash or etch selectivity.

There is also disclosed an example, wherein the dielectric plug is a non-etch-resistant dielectric material.

There is also disclosed an example, wherein shorting to the first conductive interconnect comprises an operational voltage of the integrated circuit exceeding a dielectric breakdown voltage of a dielectric disposed between the via and the first conductive interconnect.

There is also disclosed an example, wherein shorting to the first conductive interconnect comprises exceeding a dielectric breakdown voltage over a design lifetime of the integrated circuit.

There is also disclosed an example, further comprising a first hard mask material disposed above the dielectric, and further comprising wells above the conductive interconnects.

There is also disclosed an example, wherein the wells are filled with the dielectric.

There is also disclosed an example, wherein a well above the first conductive interconnect is filled with a first hard mask material.

There is also disclosed an example, wherein a well above the second conductive interconnect is filled with a second hard mask material.

There is also disclosed an example, wherein the dielectric cap comprises an oxide of hafnium.

There is also disclosed an example, wherein the dielectric cap comprises a metal oxide.

There is also disclosed an example of a system on a chip, comprising: a processor; and a communication circuit; further comprising a first layer having a dielectric, a first conductive interconnect and a second conductive interconnect; a second layer having a third conductive interconnect; a conductive via between the first layer and the second layer to electrically couple the second conductive interconnect to the third conductive interconnect; a dielectric plug disposed vertically between the first layer and second layer and disposed to prevent the via from electrically shorting to the first conductive interconnect; and a dielectric cap covering the dielectric plug.

There is also disclosed an example, wherein the dielectric cap is a substantially domed shape.

There is also disclosed an example, wherein the dielectric cap comprises a selective growth material.

There is also disclosed an example, wherein the dielectric cap comprises a base material diffused with an additive to create wash or etch selectivity.

There is also disclosed an example, wherein the dielectric cap comprises an oxide of hafnium.

There is also disclosed an example, wherein the dielectric cap comprises a metal oxide.

There is also disclosed an example of a fabrication method, comprising: depositing and patterning a first layer having a dielectric, a first conductive interconnect and a second conductive interconnect; depositing a second layer having a third conductive interconnect; constructing a conductive via between the first layer and the second layer to electrically couple the second conductive interconnect to the third conductive interconnect; constructing a dielectric plug disposed vertically between the first layer and second layer and disposed to prevent the via from electrically shorting to the first conductive interconnect; and constructing a dielectric cap over the dielectric plug.

There is also disclosed an example, wherein constructing the dielectric cap comprises selectively growing a cap dielectric above the dielectric plug.

There is also disclosed an example, wherein the cap dielectric is an oxide of hafnium.

There is also disclosed an example, wherein the cap dielectric is a metal oxide.

There is also disclosed an example, wherein constructing the dielectric cap comprises diffusing an additive into the plug and spin-on coating a next layer, wherein the additive diffuses into a portion of next layer.

There is also disclosed an example, wherein the dielectric cap is a substantially domed shape.

There is also disclosed an example, wherein the dielectric cap comprises a selective growth material.

There is also disclosed an example, wherein the dielectric cap comprises a base material diffused with an additive to create wash or etch selectivity.

There is also disclosed an example, wherein the dielectric plug is a non-etch-resistant dielectric material.

There is also disclosed an example, wherein shorting to the first conductive interconnect comprises an operational voltage of the integrated circuit exceeding a dielectric breakdown voltage of a dielectric disposed between the via and the first conductive interconnect.

There is also disclosed an example, wherein shorting to the first conductive interconnect comprises exceeding a dielectric breakdown voltage over a design lifetime of the integrated circuit.

There is also disclosed an example, further comprising deposing a first hard mask material disposed above the dielectric, and patterning wells above the conductive interconnects.

There is also disclosed an example, further comprising filling the wells with the dielectric.

There is also disclosed an example, further comprising filling a well above the first conductive interconnect with a first hard mask material.

There is also disclosed an example, further comprising filling a well above the second conductive interconnect with a second hard mask material.

There is also disclosed an example, wherein the dielectric cap comprises an oxide of hafnium.

There is also disclosed an example, wherein the dielectric cap comprises a metal oxide.

There is also disclosed an example, further comprising directed self-assembly.

There is also disclosed an example of a product produced according to the method.

There is also disclosed an example, wherein the product is an integrated circuit.

There is also disclosed an example, wherein the product is a system on a chip. 

1-25. (canceled)
 26. An integrated circuit, comprising: a first layer having a dielectric, a first conductive interconnect and a second conductive interconnect; a second layer having a third conductive interconnect; a conductive via between the second conductive interconnect and the third conductive interconnect; a dielectric plug between the via and the first conductive interconnect; and a dielectric cap on the dielectric plug.
 27. The integrated circuit of claim 26, wherein the dielectric cap has a substantially domed shape.
 28. The integrated circuit of claim 26, wherein the dielectric cap comprises a selective growth material.
 29. The integrated circuit of claim 26, further comprising a first hard mask material above the dielectric, and further comprising wells above the conductive interconnects.
 30. The integrated circuit of claim 29, wherein the wells are filled with the dielectric.
 31. The integrated circuit of claim 29, wherein a well above the first conductive interconnect is filled with a first hard mask material.
 32. The integrated circuit of claim 31, wherein a well above the second conductive interconnect is filled with a second hard mask material.
 33. The integrated circuit of claim 26, wherein the dielectric cap comprises hafnium and oxygen.
 34. The integrated circuit of claim 26, wherein the dielectric cap comprises a metal and oxygen.
 35. An integrated circuit die, comprising: a first layer having a dielectric, a first conductive interconnect and a second conductive interconnect; a second layer having a third conductive interconnect; a conductive via between the second conductive interconnect and the third conductive interconnect; a hardmask between the first layer and the second layer; a dielectric plug between the hardmask and the conductive via; and a dielectric cap on the dielectric plug.
 36. The integrated circuit die of claim 35, wherein the dielectric cap has a substantially domed shape. diffused with an additive to create wash or etch selectivity.
 37. The integrated circuit die of claim 35, wherein the dielectric cap comprises hafnium and oxygen.
 38. The integrated circuit die of claim 35, wherein the dielectric cap comprises metal and oxygen.
 39. The integrated circuit die of claim 35, wherein the integrated circuit die is a system on a chip.
 40. The integrated circuit die of claim 35, wherein the dielectric plug has a different material composition than the dielectric cap.
 41. A fabrication method, comprising: depositing and patterning a first layer having a dielectric, a first conductive interconnect and a second conductive interconnect; depositing a second layer having a third conductive interconnect; constructing a conductive via between the first layer and the second layer to electrically couple the second conductive interconnect to the third conductive interconnect; constructing a dielectric plug disposed vertically between the first layer and second layer and disposed to prevent the via from electrically shorting to the first conductive interconnect; and constructing a dielectric cap over the dielectric plug.
 42. The method of claim 41, wherein constructing the dielectric cap comprises selectively growing a cap dielectric above the dielectric plug.
 43. The method of claim 42, wherein the cap dielectric is an oxide of hafnium.
 44. The method of claim 42, wherein the cap dielectric is a metal oxide.
 45. The method of claim 41, wherein constructing the dielectric cap comprises diffusing an additive into the dielectric plug and spin-on coating a next layer, wherein the additive diffuses into a portion of next layer. 